Atomic 'patchwork' using heteroepitaxy for next generation semiconductor devices

ScienceDaily | 6/29/2019 | Staff
AavyAavy (Posted by) Level 4
Semiconductors are indispensable in the modern age; silicon-based integrated circuits underpin the operation of all things digital, from discrete devices like computers, smartphones and home appliances to control components for every possible industrial application. A broad range of scientific research has been directed to the next steps in semiconductor design, particularly the application of novel materials to engineer more compact, efficient circuitry which leverages the quantum mechanical behavior of materials at the nanometer length scale. Of special interest are materials with a fundamentally different dimensionality; the most famous example is graphene, a two-dimensional lattice of carbon atoms which is atomically thin.

Transition metal dichalcogenides (or TMDCs) are promising candidates for incorporation into new semiconductor devices. Composed of transition metals like molybdenum and tungsten and a chalcogen (or Group 16 element) like sulfur or selenium, they can form layered crystalline structures whose properties change drastically when the metallic element is changed, from normal metals to semiconductors, even to superconductors. By controllably weaving domains of different TMDCs into a single heterostructure (made of domains with different composition), it may be possible to produce atomically thin electronics with distinct, superior properties to existing devices.

Team - Dr - Yu - Kobayashi - Associate

A team led by Dr. Yu Kobayashi and Associate Professor Yasumitsu Miyata from Tokyo Metropolitan University has been at the cutting...
(Excerpt) Read more at: ScienceDaily
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