Assessing the promise of gallium oxide as an ultrawide bandgap semiconductor

ScienceDaily | 12/18/2018 | Staff
bab_ohhbab_ohh (Posted by) Level 3
In the Journal of Applied Physics, from AIP Publishing, researchers at the University of Florida, the U.S. Naval Research Laboratory and Korea University provide a detailed perspective on the properties, capabilities, current limitations and future developments for one of the most promising UWB compounds, gallium oxide (Ga2O3).

Gallium oxide possesses an extremely wide bandgap of 4.8 electron volts (eV) that dwarfs silicon's 1.1 eV and exceeds the 3.3 eV exhibited by SiC and GaN. The difference gives Ga2O3 the ability to withstand a larger electric field than silicon, SiC and GaN can without breaking down. Furthermore, Ga2O3 handles the same amount of voltage over a shorter distance. This makes it invaluable for producing smaller, more efficient high-power transistors.

Gallium - Oxide - Offers - Semiconductor - Manufacturers

"Gallium oxide offers semiconductor manufacturers a highly applicable substrate for microelectronic devices," said Stephen Pearton, professor of materials science and engineering at the University of Florida and an author on the paper. "The compound appears ideal for use in power distribution systems that charge electric cars or converters that move electricity into the power...
(Excerpt) Read more at: ScienceDaily
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