Scientists show the vulnerability of a promising two-dimensional semiconductor to air, and discover new catalyst | 9/26/2018 | Staff
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For the first time ever, an international team of scientists from NUST MISIS, the Hungarian Academy of Sciences, the University of Namur (Belgium), and Korea Research Institute for Standards & Science has detailed the structural changes of two-dimensional molybdenum disulfide under long-term environmental impact. The new data narrow the scope of its potential application in microelectronics and at the same time opens up new prospects for the use of two-dimensional materials as catalysts. The research results have been published in the international scientific journal Nature Chemistry.

Molybdenum disulfide (MoS2) is considered promising for a variety of microelectronic devices such as high-frequency detectors, rectifiers and transistors, so research teams around the world are actively studying its two-dimensional format, MoS2 nanofilm. However, the new study demonstrates that when this two-dimensional material is significantly oxidized in air, it turns into another connection.

Device - MoS2 - Protection - MoS2 - Microelectronics

Any electronic device using MoS2 without proper protection would stop working relatively quickly. To use MoS2 in microelectronics, the devices would have to be encapsulated.

"For the first time ever, we have managed to experimentally prove that a single-layer molybdenum disulfide strongly degrades under environmental conditions, oxidizing and turning into a solid solution MoS2-xOx,. The functions of a two-dimensional semiconductor without defects and losses can be implemented with molybdenum diselenides, another material with a similar structure," said Pavel Sorokin, head of the research team and leading researcher at the NUST MISIS Laboratory...
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